首页> 外文期刊>Journal of the European Ceramic Society >Investigation on the origin of the giant dielectric constant in CaCu_3Ti_4O_(12) ceramics through analyzing CaCu_3Ti_4O_(12)-HfO_2 composites
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Investigation on the origin of the giant dielectric constant in CaCu_3Ti_4O_(12) ceramics through analyzing CaCu_3Ti_4O_(12)-HfO_2 composites

机译:通过分析CaCu_3Ti_4O_(12)-HfO_2复合材料研究CaCu_3Ti_4O_(12)陶瓷中巨介电常数的起源

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A full range of CaCu_3Ti_4O_(12)-HfO_2 (CCTO-HfO_2) composites were prepared by sintering mixtures of the two components at 1000 °C for 10 h. X-ray diffraction studies confirmed the two-phase nature of the composites. The evolution of the microstructure in the composites, in particular, the size distribution of CCTO grains, was examined by scanning electron microscopy. The studies showed that, as more HfO_2 was added, the abnormal grain growth of CCTO and coarsening of the microstructure were gradually suppressed. As a result, the average CCTO grain size was reduced from 50 to 1 μm. The measured dielectric constants agree well with the values calculated from Lichtenecker's logarithmic law, using only the dielectric constants of pure CCTO and HfO_2 as two end points. The agreement suggests to us that the dielectric constant of CCTO is dominated by domain boundaries within the grains rather than by grain boundaries between the grains.
机译:通过将两种组分的混合物在1000°C下烧结10 h,制备了完整范围的CaCu_3Ti_4O_(12)-HfO_2(CCTO-HfO_2)复合材料。 X射线衍射研究证实了复合材料的两相性质。通过扫描电子显微镜检查了复合材料中微观结构的演变,特别是CCTO晶粒的尺寸分布。研究表明,随着HfO_2的添加,CCTO晶粒的异常生长和组织的粗化逐渐得到抑制。结果,平均CCTO晶粒尺寸从50μm减小到1μm。仅使用纯CCTO和HfO_2的介电常数作为两个端点,测得的介电常数与利希特内克对数定律计算的值非常吻合。该协议向我们表明,CCTO的介电常数由晶粒内的晶界边界而不是晶粒之间的晶界控制。

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