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首页> 外文期刊>Journal of the European Ceramic Society >Influence of nitrogen overpressure on the nitridation, densification and formation of β-SiAlONs produced by silicothermal reduction
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Influence of nitrogen overpressure on the nitridation, densification and formation of β-SiAlONs produced by silicothermal reduction

机译:氮超压对硅热还原法制备β-SiAlONs的氮化,致密化和形成的影响

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摘要

β-SiAlON materials (with z= 1) with 2 mol% DyAG have been synthesised by silicothermal reduction under different nitrogen pressures. The possibility of rapidly nitriding silicon and forming the SiAlON phase has been investigated through its reaction sequence of formation under different pressures. β-SiAlONs were fully nitrided (degree of nitridation greater than 93%) and formed after a 1-h hold at 1400 °C, or after a straight ramp to 1500 °C under 0.7 MPa of nitrogen. This was not achievable under static nitrogen at atmospheric pressure where the degree of nitridation was only 43% and β-SiAlON phase represented only about 60% of the crystalline phase assemblage at the same temperature. The formation of β-SiAlON depended on the formation of Si_3N_4 whose reaction rate was enhanced by nitrogen overpressures.
机译:通过在不同氮气压力下进行硅热还原,合成了具有2 mol%DyAG的β-SiAlON材料(z = 1)。通过在不同压力下形成硅的反应顺序,研究了硅快速氮化和形成SiAlON相的可能性。 β-SiAlONs被完全氮化(氮化度大于93%),并在1400°C保持1小时后,或在0.7 MPa的氮气中直升至1500°C之后形成。这在大气压下的静态氮下是无法实现的,在该压力下,氮化度仅为43%,而在相同温度下,β-SiAlON相仅占结晶相组合的60%。 β-SiAlON的形成取决于Si_3N_4的形成,其反应速率由于氮气超压而提高。

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