Deposition of highly oriented lanthanum nickel oxide thin film on silicon wafer by CSD

摘要

This paper describes the orientation control and the electrical properties of the chemical solution deposition (CSD) derived LaNiO_3 (LNO) thin film. The LNO precursor solutions were prepared using lanthanum nitrate and nickel acetate as La and Ni source, and ethanol or 2-methoxyethanol and 2-aminoethanol mixed solution as solvents. The LNO films were spin-coated using these precursor solutions and annealed at the temperature from 500 to 700 deg C. The resulting LNO film annealed at 700 deg C derived from 2-methoxyethanol and 2-aminoethanol mixed solvent exhibited (100)-orientation, with some surface cracks and pores, and relatively higher resistivity of 2.49 X 10~(-3) OMEGA cm. The LNO film derived from 2-methoxyethanol and 2-aminoethanol mixed solvent annealed at 700 deg C in an oxygen atmosphere showed highly (100)-orientation, with higher density, a few cracks and pores, and exhibited a good electrical resistivity of 7.27 x 10~(-4) OMEGA cm.