首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique
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In situ deposition of highly C-axis oriented lanthanum modified lead titanate thin films by multi-ion-beam reactive co-sputtering technique

机译:多离子束反应共溅射技术原位沉积高C轴取向镧改性钛酸铅薄膜

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摘要

Highly c-axis oriented La-modified PbTiO_3 (PLT) thin films were in situ grown on Pt(100)/MgO(100) and MgO(100) substrates by multi-ion-beam reactive co-sputtering (MIBRECS) technique at the substrate temperature range of 450 °C-540 °C. The orientation degree α of the films is more than 90%. The chemical composition is in good agreement with the designed one and is almost uniform across the surface of the substrates. The remanent polarization (P_r) and coercive field (E_c) were found to be 5.3 μC/cm~2 and 78 kV/cm, respectively.
机译:通过多离子束反应共溅射(MIBRECS)技术,在Pt(100)/ MgO(100)和MgO(100)基板上原位生长高度c轴取向的La改性PbTiO_3(PLT)薄膜。基板温度范围为450°C-540°C。膜的取向度α大于90%。化学成分与设计的成分非常一致,并且在整个基材表面上几乎是均匀的。剩余极化强度(P_r)和矫顽场(E_c)分别为5.3μC/ cm〜2和78 kV / cm。

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