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首页> 外文期刊>Journal of the European Ceramic Society >Deposition of PbTiO_3 films on Pt/Si substrates using pulsed laser deposition
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Deposition of PbTiO_3 films on Pt/Si substrates using pulsed laser deposition

机译:使用脉冲激光沉积在Pt / Si衬底上沉积PbTiO_3膜

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摘要

Lead titanate (PbTiO_3) thin films were prepared on platinised silicon substrates by pulsed laser deposition. A predominantly (111) oriented perovskite phase was obtained at a substrate temperature of 530 deg C. Deposition at higher substrate temperatures resulted in the formation of a lead deficient pyrochlore phase PbTi_3O_7. The (111) orientation was slightly enhanced with an increase in the oxygen deposition pressure from 100 mTorr to 150 mTorr. A similar effect was observed with an increase in the post-deposition annealing temperature from 400 deg C to 600 deg C. P-E loops with remanent polarization (P_r) as high as 40 mu C/cm~2 and coercive field E_c = 105 kV/cm were obtained under an electric field of an amplitude of 270 kV/cm at 50 kHz. Impedance spectroscopy and leakage current behaviour of the films are also reported.
机译:通过脉冲激光沉积在铂硅衬底上制备钛酸铅(PbTiO_3)薄膜。在530℃的基底温度下获得主要(111)取向的钙钛矿相。在较高的基底温度下沉积导致形成铅缺陷的烧绿石相PbTi_3O_7。随着氧气沉积压力从100 mTorr增加到150 mTorr,(111)取向略有增强。沉积后退火温度从400摄氏度增加到600摄氏度,观察到了类似的效果。PE回路的剩余极化(P_r)高达40μC / cm〜2,矫顽场E_c = 105 kV /在50kHz下在振幅为270kV / cm的电场下获得10cm。还报道了膜的阻抗谱和泄漏电流行为。

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