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Effect of Ag on the microstructure and electrical properties of ZnO

机译:Ag对ZnO组织和电学性能的影响

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摘要

Various amounts of silver particles, 0.08-7.7 mol percent, are mixed with zinc oxide powder and subsequently co-fired at 800-1200 deg C. The effects of Ag addition on the microstructural evolution and electrical properties of ZnO are investigated. A small Ag doping amount (<0.76 mol percent) promotes the grain growth of ZnO; however, a reversed trend in grain growth is observed for a relatively larger Ag addition (>3.8 mol percent). It is evident that a liny amount of Ag (approx 0.08 mol percent) may dissolve into the ZnO lattice. High-resolution TEM observations give direct evidences on the segregation of Ag solutes at the ZnO grain boundaries. The grain boundary resistance of ZnO increases 35-fold with the presence of Ag solute segregates. The Ag-doped ZnO system exhibits a nonlinear electric current-voltage characteristic, confirming the presence of an electrostatic barrier at the grain boundaries. The barrier is approximately 2 V for a single grain boundary.
机译:将各种量的0.08-7.7 mol%的银颗粒与氧化锌粉末混合,然后在800-1200℃下共烧。研究了Ag添加对ZnO的组织演变和电性能的影响。少量的Ag掺杂(<0.76 mol%)会促进ZnO的晶粒长大;但是,观察到相对较大的银添加量(> 3.8 mol%),晶粒长大的趋势相反。显然,少量的Ag(约0.08mol%)可能溶解在ZnO晶格中。高分辨率TEM观察结果直接证明了AgO在ZnO晶界处的偏析。由于存在银溶质偏析,ZnO的晶界电阻增加了35倍。 Ag掺杂的ZnO系统表现出非线性的电流-电压特性,证实了在晶界处存在静电势垒。对于单个晶界,势垒约为2V。

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