Redox selective reactions of organo-silicon and -tin compounds

摘要

The C-Si and C-Sn sigma orbitals are higher in energy than C-H or C-C sigma orbitals, and therefore can interact with neighboring pi systems, non-bonding orbitals of heteroatoms, and other sigma systems such as those of C-Si and C-Sn, Such interactions cause an increase of the HOMO level which in turn favors electron transfer. On the basis of this effect various types of redox selective reactions of organo-silicon and -tin compounds have been developed. [References: 58]