Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

摘要

An ultra-low specific on-resistance (R_(on,sp)) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R_(on,sp) by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). A BV of 93 V and a R_(on,sp) of 51.8 mΩ·mm~2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R_(on,sp) of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively.