首页> 外文期刊>Journal of Semiconductors >Bound polaron in a strained wurtzite GaN/Al_xGa_(1-x)N cylindrical quantum dot
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Bound polaron in a strained wurtzite GaN/Al_xGa_(1-x)N cylindrical quantum dot

机译:应变纤锌矿GaN / Al_xGa_(1-x)N圆柱量子点中的束缚极化子

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摘要

Within the effective-mass approximation, a variational method is adopted to investigate the polaron effect in a strained GaN/Al_xGa_(1-x)N cylindrical quantum dot. The electron couples with both branches of longitudinal optical-like (LO-like) and transverse optical-like (TO-like) phonons and the built-in electric field are taken into account. The numerical results show that the binding energy of the bound polaron is reduced obviously by the polaron effect on the impurity states. Furthermore, the contribution of LO-like phonons to the binding energy is dominant, and the anisotropic angle and Al content influence on the binding energy are small.
机译:在有效质量近似范围内,采用变分方法研究应变GaN / Al_xGa_(1-x)N圆柱量子点中的极化子效应。电子与纵向光学类(LO类)和横向光学类(TO类)声子的两个分支耦合,并且考虑到内置电场。数值结果表明,极化子对杂质态的作用明显降低了结合极化子的结合能。此外,LO类声子对结合能的贡献占主导,并且各向异性角和Al含量对结合能的影响小。

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