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A 200 mA CMOS low-dropout regulator with double frequency compensation techniques for SoC applications

机译:具有用于SoC应用的双频补偿技术的200 mA CMOS低压降稳压器

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摘要

This paper presents a 200 mA low-dropout (LDO) linear regulator using two modified techniques for frequency compensation. One technique is that the error amplifier uses a common source stage with variable load, which is controlled by the output current, is served as the second stage for a stable frequency response. The other technique is that the LDO uses a pole-zero tracking compensation technique at the error amplifier to achieve a good frequency response. The proposed circuit was fabricated and tested in HJTC 0.18 μm CMOS technology. The designed LDO linear regulator works under the input voltage of 2.8–5 V and provides up to 200 mA load current for an output voltage of 1.8 V. The total error of the output voltage due to line and load variation is less than 0.015%. The LDO die area is 630 × 550 μm~2 and the quiescent current is 130 μA.
机译:本文介绍了一种使用两种改进的频率补偿技术的200 mA低压降(LDO)线性稳压器。一种技术是误差放大器使用具有可变负载的公共源极级,该负载级由输出电流控制,用作稳定频率响应的第二级。另一种技术是LDO在误差放大器处使用零极点跟踪补偿技术,以实现良好的频率响应。所提出的电路是在HJTC 0.18μmCMOS技术中制造和测试的。设计的LDO线性稳压器在2.8-5 V的输入电压下工作,并为1.8 V的输出电压提供高达200 mA的负载电流。由于线路和负载变化引起的输出电压总误差小于0.015%。 LDO芯片面积为630×550μm〜2,静态电流为130μA。

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