首页> 外文期刊>Journal of Semiconductors >First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO
【24h】

First-principles study of the electronic structures and optical properties of C-F-Be doped wurtzite ZnO

机译:C-F-Be掺杂纤锌矿型ZnO的电子结构和光学性质的第一性原理研究

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

The electronic structure and optical properties of pure, C-doped, C - F codoped and C - F - Be cluster-doped ZnO with a wurtzite structure were calculated by using the density functional theory with the plane-wave ultrasoft pseudopotentials method. The results indicate that p-type ZnO can be obtained by C incorporation, and the energy level of C _O above the valence band maximum is 0.36 eV. The ionization energy of the complex Zn _(16)O _(14)CF and Zn _(15)BeO _(14)CF can be reduced to 0.23 and 0.21 eV, individually. These results suggest that the defect complex of Zn _(15)BeO _(14)CF is a better candidate for p-type ZnO. To make the optical properties clear, we investigated the imaginary part of the complex dielectric function of undoped and C - F - Be doped ZnO. We found that there is strong absorption in the energy region lower than 2.7 eV for the C - F - Be doped system compared to pure ZnO.
机译:利用密度泛函理论和平面波超软pseudo势方法,计算了纤锌矿结构纯,C掺杂,C-F共掺杂和C-F-Be团簇掺杂的ZnO的电子结构和光学性质。结果表明,可以通过掺入C获得p型ZnO,并且高于价带最大值的C _O的能级为0.36 eV。 Zn _(16)O _(14)CF和Zn_(15)BeO _(14)CF的电离能可以分别降低到0.23和0.21 eV。这些结果表明,Zn _(15)BeO _(14)CF的缺陷复合物是p型ZnO的更好的候选物。为了使光学性质清晰,我们研究了未掺杂和C-F-被掺杂的ZnO的复介电函数的虚部。我们发现,与纯ZnO相比,C-F-Be掺杂系统在低于2.7 eV的能量区域中有很强的吸收。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号