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The first-principles study of electronic structures, magnetic and optical properties for Ce-doped ZnO

机译:Ce掺杂ZnO的电子结构,磁性和光学性质的第一性原理研究

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Electronic structures, magnetic and optical properties of Ce-doped zinc-blende ZnO are studied by the first-principles of local spin density approximation based on the density function theory (DFT). Band structures, total density of states (TDOS), partial density of states (PDOS), ferromagnetic (FM), antiferromagnetic (AFM) and optical properties of Ce-doped ZnO are examined. The results show that the Fermi level move up to the conduction band and Ce-doped zinc-blende ZnO exhibits metallic, the band-gap become wider, and their conductivity are significantly improved in comparison to undoped system. All of these materials are direct transition semiconductor and shown metallic property. The conduction band and density of states have an obvious change. The Ce 4f orbital move into the conduction band, thus the bottom of conduction bands move to the low energy and show magnetism. The magnetic moments mainly arise from the Ce 4f orbitals. The absorption edge shift to the blue orientation and its intensity descend, which suggest the Ce-doped ZnO can be applied in magnetic system and photo-electronic sensor.
机译:通过基于密度泛函理论(DFT)的局部自旋密度近似的第一性原理研究了掺Ce掺锌的ZnO的电子结构,磁性和光学性质。研究了Ce掺杂ZnO的能带结构,状态总密度(TDOS),部分状态密度(PDOS),铁磁(FM),反铁磁(AFM)和光学性能。结果表明,与未掺杂的体系相比,费米能级上升到导带,掺铈的掺锌混合ZnO呈现金属态,带隙变宽,电导率显着提高。所有这些材料都是直接过渡半导体,并显示出金属性能。导带和态密度有明显变化。 Ce 4f轨道移至导带,因此导带的底部移至低能并显示出磁性。磁矩主要来自Ce 4f轨道。吸收边向蓝色方向移动,强度下降,说明掺铈的氧化锌可用于磁系统和光电传感器。

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