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首页> 外文期刊>Journal of Semiconductors >Electron energy states in a two-dimensional GaAs quantum ring with hydrogenic donor impurity in the presence of magnetic field
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Electron energy states in a two-dimensional GaAs quantum ring with hydrogenic donor impurity in the presence of magnetic field

机译:磁场存在下带有氢供体杂质的二维GaAs量子环中的电子能态

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摘要

Using the finite element method, we investigate the lowest and first few excited state energies in a twodimensional GaAs quantum ring (QR) with a hydrogenic donor impurity and effective mass approximation under a uniform magnetic field perpendicular to the ring plane. We study in detail the dependence of the energy spectrum with different angular momentum on the inner radius, the outer radius and width of the QR, the magnetic field and impurity position. The results reveal that the electron energies increase with the inner radius while decrease with the outer radius and width of the QR; for a fixed ring, the magnetic field induces the increase of the electron energies. Moreover, the existence of impurity reduces energy levels, and the energy levels depend highly on the impurity position, which decreases as the impurity is far away from the center of the QR. Also, the dependence of the angular momentum on the energy spectrum is analyzed in detail.
机译:使用有限元方法,我们研究了在垂直于环平面的均匀磁场下具有氢供体杂质和有效质量近似的二维GaAs量子环(QR)中的最低和前几个激发态能量。我们详细研究了具有不同角动量的能谱对内半径,QR的外半径和宽度,磁场和杂质位置的依赖性。结果表明,电子能量随内半径的增加而增大,随QR的外半径和宽度的减小而减小。对于固定环,磁场会引起电子能量的增加。而且,杂质的存在降低了能级,并且能级高度依赖于杂质位置,当杂质远离QR中心时,杂质位置降低。而且,详细分析了角动量对能谱的依赖性。

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