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A new single step process for synthesis and growth of ZnGeP2 crystal

机译:ZnGeP2晶体合成和生长的新一步法

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A new one-step process for synthesis and growth of zinc-germanium-phosphide, ZnGeP2 (ZGP), is reported for the first time herein using a three-zone resistance furnace by the horizontal gradient freeze technique. A safe and proper temperature scheme has been obtained for both synthesis and growth of ZGP crystals via the melt growth route from Zn, Ge and P powder. The prepared material has been investigated using powder X-ray diffraction which shows the correct ZGP tetragonal phase. EPMA results are also obtained to estimate the compositional homogeneity of the grown crystal. (c) 2008 Published by Elsevier B.V. on behalf of Taiwan Institute of Chemical Engineers.
机译:本文首次报道了使用三区电阻炉通过水平梯度冷冻技术合成和生长锌锗磷化物ZnGeP2(ZGP)的新一步法。通过锌,锗和磷粉末的熔体生长途径,已经为ZGP晶体的合成和生长获得了安全,适当的温度方案。使用粉末X射线衍射研究了制备的材料,该粉末X射线衍射显示出正确的ZGP四方相。还获得了EPMA结果以估计生长晶体的组成均匀性。 (c)2008年由Elsevier B.V.代表台湾化学工程师学会出版。

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