首页> 外文期刊>Journal of Superconductivity and Novel Magnetism >The Influence of the Microstructure and Morphology of CeO2 Buffer Layer on the Properties of YBCO Films PLD Grown on Ni Tape
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The Influence of the Microstructure and Morphology of CeO2 Buffer Layer on the Properties of YBCO Films PLD Grown on Ni Tape

机译:CeO2缓冲层的微观结构和形貌对在Ni胶带上生长的YBCO薄膜PLD性能的影响

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YBa2Cu3O7-delta films were deposited on CeO2-buffered nickel substrates, with different buffer thickness. Full width at half maximum of rocking curve, Delta(omega), of CeO2 and yttrium barium copper oxide (YBCO), as well as the critical temperature, T-c, of YBCO were shown to be strongly dependent on buffer thickness. They behave similarly but not proportional to the buffer thickness increase. This and the fact that Delta(omega) vs. buffer thickness and T-c vs. buffer thickness for YBCO behave similar with RMS roughness vs. thickness of CeO2 indicates that the surface peculiarity of buffers is responsible for YBCO properties. More precisely, the surface of CeO2 films prepared by the chemical solution route based on propionic acid is prone to agglomerate (de-wet) and the degree of agglomeration depends in an intricate way on buffer thickness. We showed that nor RMS roughness neither (00l) texture degree can define alone the surface suitable for c-axis YBCO nucleation. The {111} faceted grains (even in the case of high (00l) texture) and other defects generated by agglomeration supply a low fraction of (00l) flat terminations of buffer that affect the nucleation of c-axis-oriented YBCO phase. Moreover, the thermal instability of the surface morphology of CeO2 buffers (further development of de-wetting process, {111} faceted grains, etc. during superconducting layer deposition) influence the quality of YBCO films.
机译:YBa2Cu3O7-delta膜以不同的缓冲层厚度沉积在CeO2缓冲的镍基板上。 CeO2和氧化钇钡铜氧化物(YBCO)的摇摆曲线的一半最大值ΔΩ的全宽以及YBCO的临界温度T-c都强烈依赖于缓冲层的厚度。它们的行为类似,但与缓冲区厚度的增加不成比例。这以及YBCO的Delta(Ω)对缓冲层厚度和T-c对缓冲层厚度的行为与RMS粗糙度对CeO2厚度的关系相似的事实表明,缓冲层的表面特性决定了YBCO的性能。更精确地,通过基于丙酸的化学溶液路线制备的CeO 2膜的表面易于附聚(去湿),并且附聚的程度以复杂的方式取决于缓冲剂的厚度。我们表明,RMS粗糙度和(00l)纹理度都不能单独定义适合c轴YBCO成核的表面。 {111}刻面晶粒(即使在具有高纹理(00l)的情况下)和其他由于团聚而产生的缺陷也提供了较低比例的(00l)平坦缓冲液终端,这些影响c轴取向YBCO相的形核。此外,CeO2缓冲剂的表面形态的热不稳定性(在超导层沉积过程中进一步发展的脱湿过程,{111}多面晶粒等)会影响YBCO膜的质量。

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