...
首页> 外文期刊>Journal of Superconductivity >Epitaxial Growth of CeO{sub}2/YSZ/CeO{sub}2 Buffer Layers on Textured Ni Substrates for YBCO Conductors
【24h】

Epitaxial Growth of CeO{sub}2/YSZ/CeO{sub}2 Buffer Layers on Textured Ni Substrates for YBCO Conductors

机译:YBCO导体的织构Ni衬底上CeO {sub} 2 / YSZ / CeO {sub} 2缓冲层的外延生长

获取原文
获取原文并翻译 | 示例
           

摘要

CeO{sub}2/YSZ/CeO{sub}2 buffer layers were deposited on textured Ni substrates by in situ pulsed laser deposition. The out-of-plane texture and in-plane texture of, the buffer layers were characterized by X-ray diffraction ω-scans and φ-scans. Using this CeO{sub}2/YSZ/CeO{sub}2 architecture as the buffer layers, high quality YBCO films with a zero-resistance T{sub}c about 90 K and a self-field critical current densities J{sub}c above 10{sup}6 A/cm{sup}2 at 77 K can be obtained on Ni substrates.
机译:通过原位脉冲激光沉积将CeO {sub} 2 / YSZ / CeO {sub} 2缓冲层沉积在纹理化的Ni衬底上。通过X射线衍射ω扫描和φ扫描表征缓冲层的面外纹理和面内纹理。使用这种CeO {sub} 2 / YSZ / CeO {sub} 2体系结构作为缓冲层,可以得到零电阻T {sub} c约为90 K,自电场临界电流密度J {sub}的高质量YBCO膜。在Ni衬底上可获得77 K时10 {sup} 6 A / cm {sup} 2以上的c。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号