首页> 外文期刊>Journal of Photochemistry and Photobiology, A. Chemistry >Study of charge transition between interfaces of hetero-structured assemblies based on phenyl-capped aniline tetramer(p)-silcon
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Study of charge transition between interfaces of hetero-structured assemblies based on phenyl-capped aniline tetramer(p)-silcon

机译:基于苯基苯胺四聚体/ n(p)-硅的异质组装体界面间电荷转移的研究

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摘要

Emeraldine base (PECT-EE) and leucoemeraldine base (pECT-LEE) of phenyl-end-capped aniline tetramer have been coated on n(p)-silicon wafers by spin-coating, respectively. The interfacial electron transfers of the assemblies PECT-EE/p-Si, PECT-EEffi-Si, PECT -LEE/p-Si, and PECT -LEEffi-Si were studied by surface photovoltage spectroscopy (SPS). The results indicate that PECT -EE and PECT -LEE make the surface photovoltage (SPY) response of p-Si decreasing and the SPY response of n-Si increasing. The facts imply that the mechanisms of charge transfer of the assemblies are different. Therefore, two reasonable energy band models have been built up to illustrate the transfer process of interfacial charges of p-Si and n-Si coated by PECT -EE and PECT -LEE.
机译:苯基端基苯胺四聚体的翡翠碱(PECT-EE)和亮氨酸翡翠碱(pECT-LEE)已分别通过旋涂法涂覆在n(p)-硅晶片上。通过表面光电压光谱法(SPS)研究了组件PECT-EE / p-Si,PECT-EEffi-Si,PECT-LEE / p-Si和PECT-LEEffi-Si的界面电子转移。结果表明,PECT -EE和PECT -LEE使p-Si的表面光电压(SPY)响应减小,而n-Si的SPY响应增大。事实表明组件的电荷转移机制是不同的。因此,建立了两个合理的能带模型来说明PECT -EE和PECT -LEE涂覆的p-Si和n-Si界面电荷的转移过程。

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