Proposed a Tunnel Field-Effect Transistor with High ON-State Current by Using Full Depleted Source Structure

摘要

In this work, we present a novel germanium tunnel field-effect transistor structure to overcome the issue of low ON state current in conventional tunnel field-effect transistors. The working principle is demonstrated and the performance is explored by using two-dimensional device simulator. The simulated results show a steep average subthreshold slope S = 51 mV/dec over seven decades of drain current, I_(ON)/I_(OFF) ratio of 10~7, and drain current of I_(ON) = 5 μA/μm at V_(DD) = 0.5 V, implying the potential application of this tunnel field-effect transistor to low power logic circuit. Moreover, the simple device structure is readily extended to other semiconductor nanofilm devices such as InGaAs and graphene.