Simulation of Blistering for Estimating the Optical Properties of Disordered Porous Media

摘要

The material porosity can be calculated by numerically simulating bulk defect formation in a silicon carbide–metal bilayer exposed to an inert gas flow with an ion energy of ~7 keV. The nanopore distributions over sizes and coordinates of a layer ~1 μm thick are important for estimating its optical properties and the level of radiation damage at the 3C-SiC–metal interface on the side of the semiconductor.