Investigation of the interface of insulated silicon tensoresistive Frame-on-Silicon heterostructure for MEMS pressure transducers

摘要

The results of analysis of the surface morphology of transition regions at the interfaces of a hetero-structure of single silicon Cglassy dielectric Csingle silicon, used as a chip in the microelectromechanical systems (MEMS) of tensoresistive pressure transducers, are presented. The interfaces are studied by scanning electron microscopy and atomic-force microscopy (AFM). Possible reasons for the formation of local centers of mechanical stress in the transition regions and at the chip surface are discussed.