首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Ionization Effects in Si/SiO_2 : Li, Na, K Implanted Structures under the Impact of High-Energy α Particles
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Ionization Effects in Si/SiO_2 : Li, Na, K Implanted Structures under the Impact of High-Energy α Particles

机译:高能α粒子对Si / SiO_2:Li,Na,K注入结构的电离作用

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摘要

The method of thermally stimulated electron emission is applied in order to investigate ionization processes and defect formation in Si/SiO_2 structures under the impact of high-energy α particles. The implantation of Si/SiO_2 films with Li~+, Na~+, and K~+ alkali-metal ions is found to contribute to the formation of active emission L centers in the modified oxide layer, which provides sensitivity to α radiation. The parameters of the emission centers are identified and analyzed. It is shown than Si/SiO_2 : Li heterostructures could be used to detect α radiation.
机译:为了研究在高能α粒子的作用下Si / SiO_2结构中的电离过程和缺陷形成,采用了热激发电子发射方法。发现用Li〜+,Na〜+和K〜+碱金属离子注入Si / SiO_2膜有助于在改性氧化物层中形成有源发射L中心,从而对α辐射具有敏感性。识别并分析排放中心的参数。它显示出比Si / SiO_2:Li异质结构可用于检测α辐射。

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