Effects of copper excess and copper deficiency on the structural and electrical properties of bulk CuxSnSe3 with x=1.6-2.2

摘要

Effects of the Cu variation on the morphological, structural, and electrical properties of bulk CuxSnSe3 (CTSe) with x=1.6-2.2 have been investigated. Dense CTSe pellets with grains of 3-4 mu m were obtained after sintering at 550 degrees C. All CTSe pellets showed a dominant p-type behavior. CfSe at x=2.0 with a hole concentration (n(p)) of 1.02 x 10(18) cm(-3) and Hall mobility (mu) of 225 cm(2)/V/s had a highest conductivity (sigma) of 39 S/cm. CTSe at x=1.6 with n(p) of 5.0 x 10(17) cm(-3) and of 11 cm(2)/V/s had a lowest of 0.90 S/cm. The explanation, based upon vacancies and antisite defects, for the changes in electrical property with the Cu content is supported by the data from lattice parameter. The study in bulk properties of CTSe and its defects is helpful for selecting the suitable absorber composition to fabricate thin film solar cells. (C) 2015 Elsevier Inc. All rights reserved.