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BaGa _2GeX _6(X=S, Se): New mid-IR nonlinear optical crystals with large band gaps

机译:BaGa _2GeX _6(X = S,Se):带隙较大的新型中红外非线性光学晶体

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摘要

New middle infrared nonlinear optical crystals of BaGa 2GeX 6(X=S, Se) have been synthesized. The structures of both BaGa _2GeS _6 and BaGa _2GeSe _6 were found to be isomorphous exhibiting a three-dimensional framework constructed by the parallel alignment of Ga or Ge tetrahedron groups along the c-aix. The ultraviolet transmittance spectrum indicates the short-wavelength absorption edges of BaGa _2GeS _6 and BaGa _2GeSe _6 are 380 nm and 440 nm, respectively. The IR transmittance spectrum shows that the absorption edge of the BaGa _2GeS _6 crystal is 13.7 μm. Second-harmonic generation of the powder samples was measured with a 2.05 μm laser using the Kurtz and Perry technique, which showed that BaGa _2GeS _6 and BaGa _2GeSe _6 are phase-matched materials, and their measured SHG coefficient is ~2.1 and ~3.5 times as large as the coefficient of AgGaS _2, or 26.3 pm/V and 43.7 pm/V.
机译:合成了BaGa 2GeX 6(X = S,Se)的新型中红外非线性光学晶体。发现BaGa _2GeS _6和BaGa _2GeSe _6的结构是同构的,它们表现出由Ga或Ge四面体基团沿c-aix平行排列构成的三维骨架。紫外线透射光谱表明BaGa _2GeS _6和BaGa _2GeSe _6的短波长吸收边缘分别为380 nm和440 nm。红外透射光谱表明,BaGa_2GeS_6晶体的吸收边为13.7μm。使用Kurtz and Perry技术在2.05μm激光下测量粉末样品的二次谐波生成,结果表明BaGa _2GeS _6和BaGa _2GeSe _6是相匹配的材料,其SHG系数分别为〜2.1和〜3.5倍。等于AgGaS _2的系数,即26.3 pm / V和43.7 pm / V。

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