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首页> 外文期刊>Journal of Sol-Gel Science and Technology >Structural, magnetic and dielectric properties of spinel MgFe2O4 by sol-gel route
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Structural, magnetic and dielectric properties of spinel MgFe2O4 by sol-gel route

机译:溶胶-凝胶法制备尖晶石MgFe2O4的结构,磁性和介电性能

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摘要

Importance of spinel ferrites arises due to their technological and industrial applications in electronic and spintronic devices. Among magnetic ferrites with formula XFe2O4 (where X = Co, Ni, etc.), magnesium ferrite, with unique magnetic properties along with n-type conductivity, has significant advantage over other spinel ferrites. In this work MgFe2O4 sols and thin films are prepared using sol-gel and spin coating method. Mg/Fe ratio is varied as 0.4, 0.45, 0.5, 0.55, 0.6. Magnetic properties of sols indicate presence of single magnetic phase with Mg/Fe ratio of 0.55. Variation in Mg/Fe ratio during sol synthesis not only affects the magnetic properties but also affects phase purity of magnesium iron oxide thin films. Presence of diffraction peaks corresponding to (220), (222), (400), (331) and (620) planes confirm the formation of MgFe2O4 at low annealing temperature of 300 A degrees C with Mg/Fe ratio of 0.55. This is the lowest temperature that has ever been reported for the formation of phase pure MgFe2O4 thin films. Phase purity at Mg/Fe ratio of 0.55 also results in high dielectric constant and low dielectric loss. Arrhenius plot for conductivity shows semiconducting behavior due to electron hopping between Fe2+ and Fe3+ cations. Moreover, strong magnetic behavior with high saturation magnetization of 163 emu/cm(3) is obtained with Mg/Fe ratio of 0.55. Saturation magnetization decrease with Mg/Fe 0.4, 0.45, 0.5 and 0.6.
机译:尖晶石铁氧体的重要性是由于其在电子和自旋电子器件中的技术和工业应用而引起的。在分子式为XFe2O4的磁性铁氧体中(其中X = Co,Ni等),具有独特磁性和n型导电性的镁铁氧体比其他尖晶石铁氧体具有明显的优势。在这项工作中,MgFe2O4溶胶和薄膜是使用溶胶-凝胶法和旋涂法制备的。 Mg / Fe比变化为0.4、0.45、0.5、0.55、0.6。溶胶的磁性表明存在Mg / Fe比为0.55的单一磁性相。溶胶合成中Mg / Fe比的变化不仅影响磁性,而且影响氧化镁铁薄膜的相纯度。对应于(220),(222),(400),(331)和(620)平面的衍射峰的存在证实了在300 A的低退火温度下Mg / Fe比为0.55的MgFe2O4的形成。这是有史以来形成相纯MgFe2O4薄膜的最低温度。 Mg / Fe比为0.55时的相纯度也导致高介电常数和低介电损耗。电导率的阿伦尼乌斯图显示了由于Fe2 +和Fe3 +阳离子之间的电子跳跃而引起的半导体行为。此外,以0.55的Mg / Fe比可获得具有163 emu / cm(3)的高饱和磁化强度的强磁行为。当Mg / Fe为0.4、0.45、0.5和0.6时,饱和磁化强度降低。

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