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首页> 外文期刊>Journal of Plasma Physics >Department of Applied Physics, Hanyang University, Ansan, Kyunggi-Do 426-791, South Korea_c
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Department of Applied Physics, Hanyang University, Ansan, Kyunggi-Do 426-791, South Korea_c

机译:汉阳大学应用物理学系,韩国京畿道安山市426-791

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A general theory for the existence of solitary structure at M = Mc has been discussed, where Mc is the lower bound of the Mach number M, i.e., solitary structures start to exist for M >M c. Three important results have been proved to confirm the existence of solitary structure at M = M c. If V(?)(= V(M,?)) denotes the Sagdeev potential with ? being the perturbed field or perturbed dependent variable associated with a specific problem, V(M,?) is well defined as a real number for all M ∈ M and ?∈. ψ 0, and V(M, 0) = V′(M, ?) = V′′(M c, 0) = 0, V′′′M c, 0) 0 (V′′′(M c, 0) > 0),?V/?M < 0 for all M(∈ M)> 0 and ?(∈ φ 0) > 0 (?(∈ φ 0) < 0), where ′ = ?/?? ', the main analytical results for the existence of solitary wave or double layer solution of the energy integral at M = M c are as follows. Result 1: If there exists at least one value M 0 of M such that the system supports positive (negative) potential solitary waves for all Mc < M
机译:已经讨论了在M = Mc处存在孤立结构的一般理论,其中Mc是马赫数M的下限,即,对于M> M c,孤立结构开始存在。已经证明了三个重要结果,证实了M = M c时存在孤立结构。如果V(?)(= V(M ,?))表示Sagdeev势为?作为与特定问题相关的扰动场或扰动因变量,V(M ,?)定义为所有M∈M和?∈的实数。 ψ0,且V(M,0)= V'(M,?)= V''(M c,0)= 0,V'''M c,0)0(V'''(M c, 0)> 0),对于所有M(∈M)> 0且?(∈φ0)> 0(?(∈φ0)<0),? V /?M <0 ”,对于在M = M c处能量积分存在孤立波或双层解的主要分析结果如下。结果1:如果存在至少一个M的值M 0,使得系统对所有Mc

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