Modelling of plastic behaviour of compound semiconductors; from simple glide to multiglide

摘要

The compressive stress-strain curves of GaAs are simulated using a proposed model of multislip taking into account perfect dislocations of three types. The results show the dominant activation of dislocations by the primary slip system and the minor role of the secondary system. The yield drop observed at higher temperatures is not obtained. Possible applications of and existing restrictions on the model are mentioned. [References: 9]