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Structural and optical properties of magnetron sputtered MgxZn1-xO thin films

机译:磁控溅射MgxZn1-xO薄膜的结构和光学性质

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MgxZn1-xO ( MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap similar to 4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.
机译:报道了通过射频磁控溅射技术制备的MgxZn1-xO(MZO)薄膜。该膜在室温和相对低的50 W rf功率下生长。发现MZO薄膜具有优选的c轴取向,并且在Mg浓度高达42 mol%时呈现ZnO六方纤锌矿结构。随着Mg组成的增加,观察到c轴晶格参数的微小变化约为0.3%,这表明Mg在ZnO中完全溶解。纤锌矿相中MZO膜的带隙随Mg浓度线性变化,在x = 0.42时达到了类似于4.19 eV的最大带隙。发现MgO膜的折射率随着Mg含量的增加而降低。观察到的光学色散数据与单振荡器模型一致。光致发光研究表明,随着MZO膜中Mg含量的增加,近带边缘发射峰发生蓝移。结果显示了MZO膜在各种光电应用中的潜力。

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