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Nano-scale distribution of ZnO free exciton luminescence in ZnO : Zn microcrystals and its modification under electron beam excitation

机译:ZnO:Zn微晶中ZnO自由激子发光的纳米尺度分布及其在电子束激发下的修饰

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摘要

The dependences of cathodoluminescence (CL) from ZnO:Zn phosphor powder upon local space, accelerating voltage and beam current have been investigated at room temperature. Ultraviolet (UV) luminescence, which is hard to be observed in photoluminescence (PL) at room temperature, has been clearly observed in CL as well as green luminescence. The intensity ratio of the UV luminescence to the green one varies from point to point. From the comparison with PL, the UV luminescence is attributed to the recombination of ZnO free excitons. The UV luminescence is little observed at low accelerating voltage where, similar to the excitation light for PL measurement, the electron beam penetrates into only the surface depletion layer where free excitons are unstable due to the surface electric field. However, the UV luminescence from the depletion layer becomes observable at large beam current because of the suppression of the electric field in the depletion layer caused by injected electrons.
机译:在室温下研究了ZnO:Zn荧光粉的阴极发光(CL)对局部空间,加速电压和电子束电流的依赖性。紫外线(UV)发光(在室温下很难在光致发光(PL)中观察到)已经在CL和绿色发光中清晰地观察到。 UV发光与绿色发光的强度比因点而异。通过与PL的比较,UV发光归因于ZnO游离激子的重组。在低加速电压下几乎看不到UV发光,在该电压下,类似于PL测量的激发光,电子束仅穿透表面耗尽层,在该表面耗尽层中,自由激子由于表面电场而变得不稳定。然而,由于抑制了由注入的电子引起的耗尽层中的电场,因此在大束电流下可观察到来自耗尽层的UV发光。

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