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The effect of annealing on structural and optical properties of ZnO thin films grown by pulsed filtered cathodic vacuum arc deposition

机译:退火对脉冲过滤阴极真空电弧沉积生长的ZnO薄膜结构和光学性能的影响

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摘要

Thin ZnO films were deposited at room temperature on glass substrates by a pulsed filtered cathodic vacuum arc deposition system. The crystallographic structure and the size of the crystallites in the films were studied by means of x-ray diffraction. These measurements show that all the films are crystallized in the wurtzite form, present in a preferred orientation along the ( 002) direction, and the grain size is estimated to be 18.9 - 42 nm. The crystallite sizes were found to increase and the x-ray diffraction patterns were sharpened by annealing. Optical properties of the ZnO films were studied using a UV-visible spectrometer and calculations made using the envelope method. The absorption coefficient and optical band gap of the films were increased while the refractive index was decreased by annealing. The best annealing temperature for pulsed cathodic vacuum arc deposition grown ZnO thin films on glass substrates was found to be 600 degrees C from optical properties. This temperature is as high as can be measured for glass substrates samples because of the glass properties.
机译:ZnO薄膜在室温下通过脉冲过滤阴极真空电弧沉积系统沉积在玻璃基板上。通过X射线衍射研究了膜中的晶体结构和微晶的尺寸。这些测量结果表明,所有膜均以纤锌矿形式结晶,并沿(002)方向以优选方向存在,并且晶粒尺寸估计为18.9-42 nm。发现微晶尺寸增加并且通过退火使x射线衍射图变尖锐。使用紫外可见分光光度计研究ZnO薄膜的光学性能,并使用包络线法进行计算。通过退火,增加了膜的吸收系数和光学带隙,同时降低了折射率。从光学性能来看,发现在玻璃基板上脉冲阴极真空电弧沉积生长的ZnO薄膜的最佳退火温度为600摄氏度。由于玻璃的性质,该温度与玻璃基板样品所能测得的温度一样高。

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