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Electron- and hole-doping effects on the electronic structure of manganite studied by X-ray absorption spectroscopy

机译:X射线吸收光谱研究电子和空穴掺杂对锰电子结构的影响

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摘要

The electronic structures of hole-doped La0.7Ca0.3MnO3 and electron-doped La0.7Ce0.3MnO3 manganites are investigated by x-ray absorption near-edge structure spectroscopy at the O and Mn K-, and Mn L-3,L-2-edges. The Mn K- and L-3,L-2-edge results show that Ce dopants increase the occupation of the Mn 4p and majority-spin e(g) orbitals and reduce the positive effective charge of some Mn ions. However, Ce doping also induces holes in O 2p derived states. As for La0.7Ca0.3MnO3, in contrast to previous understanding that Ca doping converts some Mn ions into the Mn4+ state, we find that Ca dopants actually increase the number of majority-spin e(g) electrons. We find instead that the holes created by Ca dopants are in the O 2p derived states.
机译:在O和Mn K-以及Mn L-3,L-处通过x射线吸收近缘结构光谱研究了空穴掺杂La0.7Ca0.3MnO3和电子掺杂La0.7Ce0.3MnO3锰的电子结构。 2条边。 Mn K-和L-3,L-2-edge的结果表明Ce掺杂剂增加了Mn 4p和多数自旋e(g)轨道的占据,并降低了某些Mn离子的正有效电荷。但是,Ce掺杂也会在O 2p衍生态中诱发空穴。至于La0.7Ca0.3MnO3,与先前对Ca掺杂将一些Mn离子转化为Mn4 +状态的理解相反,我们发现Ca掺杂剂实际上增加了多数自旋e(g)电子的数量。相反,我们发现由Ca掺杂剂产生的空穴处于O 2p衍生态。

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