Charge density analysis of SiO2 under pressures over 50 GPa using a new diamond anvil cell for single-crystal structure analysis

摘要

Single-crystal structure analysis of SiO2 stishovite, (rutile type, P4(2)/mnm z = 2) was carried out using the newly devised diamond anvil cell. The electron-density distribution was investigated at high pressures up to 50 GPa using synchrotron radiation at SPring-8 and a laboratory x-ray source generator of Ag Kalpha rotating anode generator. Using large diamond crystal windows instead of beryllium for the cell has several advantages for single-crystal diffraction study supplying the large Q-value. [References: 13]