Tunable magnetic and electrical properties of polycrystalline and epitaxial Ni_xFe_(3-x)O_4 thin films prepared by reactive co-sputtering

摘要

Polycrystalline and epitaxial Ni_xFe_(3-x)O4 (0 ≤ x ≤ 1.03) thin films were fabricated by reactively co-sputtering Fe and Ni targets in a mixed Ar + O_2 atmosphere, and the structure, magnetic and magnetotransport properties were investigated systematically. The saturation magnetization and resistivity can be tuned over a wide range. The room-temperature saturation magnetization for the polycrystalline thin films decreases linearly with x from 440 to 230 emu cm~(-3), due to Ni substitution. For the epitaxial thin films, the saturation magnetization and the resistivity can be tuned in the range 195-340 emu cm~(-3) and 10 ~(-4)-10~(-2) Ω m by Ni substitution and the introduction of Fe vacancies, because both Ni substitution and Fe vacancies can influence the charge carrier density and the double exchange on the B sublattice.