Laser beam deflection-based perimeter scanning of integrated circuits for local overheating location

摘要

In integrated circuits, local overheating (hot spots) can be detected by monitoring the temperature gradients present in the silicon substrate at a given depth, laterally accessing the die with an infra-red laser beam probe. The sensed magnitude is the laser beam deflection, which is proportional to the temperature gradients found along the beam trajectory (mirage effect). Biasing the devices with periodic electrical functions allows employing lock-in detection strategies (noise immunity) and thermally isolating the analysed chip substrate thermal behaviour from the external boundary conditions by setting the excitation frequency (control of the thermal energy penetration depth). Measuring the first harmonic of the deflection signal components (vertical and horizontal) allows performing a fast and accurate location of devices, interconnects or circuits dissipating relatively high power levels without any calibration procedure. It has been concluded that the horizontal component of the beam deflection provides a higher spatial resolution than the vertical one when measurements are performed beyond the thermal energy penetration depth.