A rigorous theoretical analysis for an In0.53Ga0.47As/InP single photon avalanche photodiode under Geiger mode operation

摘要

A rigorous theoretical model for In0.53Ga0.47As/InP single photon avalanche photodiodes operated in the Geiger mode is developed to calculate dark count probabilities over a wide range of temperatures and widths of multiplication layer. Both nonlocal ionization and low field impact ionization in the absorption layer are considered in this model. The calculated results confirm that impact ionization in the absorption and charge layers increases the dark count probability. The primary mechanism of dark counts depends on both device structure and operating conditions. For a 1 mu m multiplication width, the dominant mechanism of the dark counts at a temperature above 233 K is the generation-recombination in the absorber while at a temperature below 233 K the tunnelling effect in the multiplication layer begins to dominate.