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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Synchrotron radiation topographic study of slip transfer across grain boundaries in Fe-Si bicrystals
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Synchrotron radiation topographic study of slip transfer across grain boundaries in Fe-Si bicrystals

机译:Fe-Si双晶中跨晶界滑移的同步辐射形貌研究

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The transfer of the common slip system across grain boundaries was examined. Bicrystals of alloys Fe-Si with Si content 4 and 5.5 at% were used for both tension and compression straining. The progress of the deformation was followed by synchrotron radiation diffraction topography after straining and under increasing external stress. An x-ray sensitive camera was used for recording the topographs in addition to the classical technique using photographic plates. Three slightly different settings with different sensitivities to interplanar spacing (deformation) and orientation variations of the adjacent crystal regions were applied. The movement of the slip bands was followed. A distortion of the image appeared at the grain boundary when the slip bands stopped there and decreased or nearly disappeared when the slip bands crossed it after an increase in the applied stress. The distortion is explained by elastic deformation around the heads of the slip bands stopped at the boundary. True slip transfers are differentiated from the false ones by observing elastic deformation in early deformation stages and by optical observation of slip pattern after deformation. The transfer of the common slip system across a twin boundary, whereas expected to be direct, required stress accumulation. The twin boundary proved to be a real barrier. The results obtained for specimens with different Si content were compared.
机译:研究了普通滑移系统跨晶界的转移。 Si和Si含量分别为4和5.5 at%的Fe-Si合金的双晶用于拉伸和压缩应变。形变的过程是应变后并在外部应力增加的情况下进行的同步辐射衍射形貌。除了使用照相板的经典技术之外,还使用X射线敏感相机记录地形图。施加了三个略微不同的设置,这些设置对相邻晶体区域的晶面间距(变形)和方向变化具有不同的敏感性。跟随滑带的运动。当滑移带在此处停止时,图像变形出现在晶界处;当施加应力增加后,当滑移带穿过晶界时,图像变形减小或几乎消失。变形是通过止于边界处的滑带头部周围的弹性变形来解释的。通过观察变形初期的弹性变形和光学观察变形后的滑模,可以将真滑移与假滑移区分开。普通的滑移系统跨越双边界的转移,尽管预期是直接的,但需要应力积累。孪生边界被证明是真正的障碍。比较了不同硅含量的样品的结果。

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