ALTERNATING CURRENT ELECTROLUMINESCENT DEVICES PREPARED USING LOW-TEMPERATURE REMOTE PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION SIO2 AND ZNS-MN DEPOSITED BY SPRAY PYROLYSIS

摘要

Alternating current electroluminescent thin film structures have been prepared using, for the first time, high-quality SiO2 insulating thin films and spray pyrolysed ZnS:Mn as the active layer. Structures prepared with insulating films of thickness 60 nm show threshold voltages of 30 V (root mean square) and saturation voltages of about 56 V (root mean square). These structures show an electroluminescent emission with a peak centred at 590 nm associated with the Mn2+ centre. The brightness-voltage characteristics are typical for a structure of metal-insulator-active layer-insulator-metal type. The external efficiency calculated from the charge-voltage characteristics has a value of 1.8 Im W-1. [References: 13]