首页> 外文期刊>Journal of Physics, B. Atomic, Molecular and Optical Physics: An Institute of Physics Journal >Saturated multikilovolt x-ray amplification with Xe clusters: single-pulse observation of Xe(L) spectral hole burning
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Saturated multikilovolt x-ray amplification with Xe clusters: single-pulse observation of Xe(L) spectral hole burning

机译:Xe团簇的饱和多千伏x射线放大:Xe(L)光谱孔燃烧的单脉冲观察

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Single-pulse measurements of spectral hole burning of Xe(L) 3d --> 2p hollow atom transition arrays observed from a self-trapped plasma channel provide new information on the dynamics of saturated amplification in the lambda similar to 2.8-2.9 Angstrom region. The spectral hole burning on transitions in the Xe34+, and Xe35+ arrays reaches full suppression of the spontaneous emission and presents a corresponding width Deltahomega(x) congruent to 60 eV, a value adequate for efficient amplification of multikilovolt x-ray pulses down to a limiting length tau(x) similar to 30 as. The depth of the suppression at 2.86 Angstrom indicates that the gain-to-loss ratio is greater than or equal to10. An independent determination of the x-ray pulse energy from damage produced on the surface of a Ti foil in the far field of the source gives a pulse energy of 20-30 muJ, a range that correlates well with the observation of the spectral hole burning and indicates an overall extraction efficiency of similar to10%. [References: 13]
机译:从自陷等离子体通道观察到的Xe(L)3d-> 2p空心原子过渡阵列的光谱空穴燃烧的单脉冲测量提供了关于λ中类似于2.8-2.9埃区域的饱和放大动力学的新信息。在Xe34 +和Xe35 +阵列上的跃迁上燃烧的光谱孔达到了对自发发射的完全抑制,并呈现了相当于60 eV的相应宽度Deltahomega(x),该值足以有效放大多千伏X射线脉冲,直至达到极限长度tau(x)类似于30 as。抑制深度为2.86埃,表明增益/损耗比大于或等于10。根据源远场中Ti箔表面产生的损伤来独立确定x射线脉冲能量,可得出20-30μJ的脉冲能量,该范围与光谱孔燃烧的观察密切相关表示总提取效率接近10%。 [参考:13]

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