Planar channelling of 855 MeV electrons in silicon: Monte Carlo simulations

摘要

A new Monte Carlo code for the simulation of the channelling of ultrarelativistic charged projectiles in single crystals is presented. A detailed description of the underlying physical model and the computation algorithm is given. The first results obtained with the code for the channelling of 855 MeV electrons in silicon crystal are presented. The dechannelling lengths for (1 0 0), (1 1 0) and (1 1 1) crystallographic planes are estimated. In order to verify the code, the dependence of the intensity of the channelling radiation on the crystal dimension along the beam direction is calculated. A good agreement of the obtained results with recent experimental data is observed.