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Suppression of critical properties in doped cuprates

机译:抑制掺杂铜酸盐的关键性能

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In high-T-c superconductors dopant atoms supply holes or excess electrons. Electric conduction happens in the neighbourhood of dopants within a circle several lattice constants wide. Percolation of these conducting areas leads to global conduction. Diffusing d-electrons in these areas can destroy antiferromagnetism: the Neel temperatures decrease with doping. Based on an Ising model with antiferromagnetic interactions acting in the part of the lattice not covered by conducting areas, the specific heat, the staggered susceptibility and the spin correlation lengths show very broad peaks even for low dopant concentrations. In doped cuprates, due to the small size granularity comparable with the sizes of our simulated systems, possible peak height singularities are always suppressed.
机译:在高T-c超导体中,掺杂原子提供空穴或多余的电子。导电发生在几个晶格常数宽的圆内的掺杂剂附近。这些导电区域的渗透导致整体导电。在这些区域中扩散的d电子会破坏反铁磁性:掺杂会降低Neel温度。基于具有反铁磁相互作用作用于未被导电区域覆盖的晶格部分的伊辛模型,比热,交错磁化率和自旋相关长度即使在低掺杂剂浓度下也显示出非常宽的峰。在掺杂的铜酸盐中,由于与我们模拟系统的尺寸可比的小尺寸粒度,始终抑制了可能的峰高奇异性。

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