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首页> 外文期刊>Scientific reports. >Possible quantum critical behavior revealed by the critical current density of hole doped high-Tc cuprates in comparison to heavy fermion superconductors
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Possible quantum critical behavior revealed by the critical current density of hole doped high-Tc cuprates in comparison to heavy fermion superconductors

机译:与重型超级导电器相比,由掺杂高Tc铜酸酯的孔孔掺杂的临界电流密度揭示的量子临界行为

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The superconducting critical current density, Jsubc/sub, in hole doped cuprates show strong dependence on the doped hole content, p, within the copper oxide plane(s). The doping dependent Jsubc/sub mainly exhibits the variation of the intrinsic depairing critical current density as p is varied. Jsubc/sub(p) tends to peak at p ~ 0.185 in copper oxide superconductors. This particular value of the hole content, often termed as the critical hole concentration, has several features putative to a quantum critical point (QCP). Very recently, the pressure dependences of the superconducting transition temperature (Tsubc/sub) and the critical current (Isubc/sub) in pure CeRhInsub5/sub and Sn doped CeRhInsub5/sub heavy fermion compounds have been reported (Nature Communications (2018) 9:44, https://doi.org/10.1038/s41467-018-02899-5 ). The critical pressure demarcates an antiferromagnetic quantum critical point where both Tsubc/sub and Isubc/sub are maximized. We have compared and contrasted this behavior with those found for Ysub1-x/subCasubx/subBasub2/subCusub3/subOsub7-δ/sub in this brief communication. The resemblance of the systematic behavior of the critical current with pressure and hole content between heavy fermion systems and hole doped cuprates is significant. This adds to the circumstantial evidence that quantum critical physics probably plays a notable role behind the unconventional normal and superconducting state properties of copper oxide superconductors.
机译:在孔掺杂铜酸盐中的超导临界电流密度J C 掺杂铜酸铜的强烈依赖性依赖于氧化铜平面内的掺杂孔含量。掺杂依赖性J C 主要表现出固有的临界电流密度的变化,因为P变化。 J c (p)倾向于在氧化铜超导体中p〜0.185的峰值。该空穴含量的特定值通常被称为临界空穴浓度,该特征具有若干临界点(QCP)的特征。最近,纯Cerhin 5 和sn中的超导转变温度(t c )和临界电流(i c )的压力依赖性掺杂的Cerhin 5 重度铁饼化合物(自然通信(2018)9:44,https://doi.org/10.1038/s41467-018-02899-5)。临界压力划分反铁磁量子临界点,其中T c 和i c 最大化。我们已经将这种行为与y 1-x ca x ba 2 cu 3 o进行了比较和对比这种行为。 7-Δ在此简短的沟通中。临界电流的系统行为与重度偏差系统和孔掺杂铜酸孔之间的压力和孔含量的相似性显着。这增加了量子临界物理学可能在氧化铜超导体的非传统正常和超导状态性质背后发挥着显着作用。

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