Non- c- plane (Al, Ga, In) with silicon (Si) doped for the suppression of tilt defect formation and the critical thickness increased

摘要

A method of fabricating a Group III nitride semiconductor device , the method , there is provided by growing a (a) a semi- polar or nonpolar GaN substrate or one or more buffer layers on the upper side , the buffer layer is a semi-polar or non-polar group III nitride buffer layer , and that , the number of crystal defects in the Group III nitride device layer to be formed on or above the (b) doped buffer layer , one as not higher than the number of crystal defects in the III -nitride device layer to be formed over the doped with a buffer layer or above that does not , and a to doped buffer layer . Be doped , can reduce or prevent the formation of misfit dislocations and additional threading dislocations . The thickness and / or composition of the buffer layer , the buffer layer , may be one such as those having a larger thickness or close to the critical thickness for relaxation .