Influence of initial defects on defect formation process in ion doped silicon

摘要

We study the influence of initial defects in high-resistance epitaxial siliconudlayers of high-resistance epitaxial silicon structures on defect formation processes at ionudboron doping. The method of reverse voltage-capacitance characteristics revealed twoudmaxima of dopant concentration in epitaxial silicon layers ion-doped by boron. Studingudthe structure of the near-surface area in ion-doped epitaxial silicon by means of modernudmethods has shown that in the field of the first concentration maximum (the nearest oneudto a wafer surface), the fine-blocked silicon structure is localised. In the range of theudsecond doping concentration maximum, the grid of dislocations with the variable periodudwithin one grid and consisting of 60° dislocations is found out. In the area of dislocationudgrids, oxygen atoms have been found out. The variable period in the grid is related with audchange of mechanical stress and deformation distribution law in the plane of dopantuddiffusion front as dependent on the presence of initial defects in silicon.