Selective Laser Ablation in Resists and Block Copolymers for High Resolution Lithographic Patterning

摘要

Previously, we demonstrated an all dry, selective laser ablation development in methyl acetoxy calixarene (MAC6) which produced high resolution (15-25 nm half-pitch), high aspect ratio features not achievable with wet development. In this paper, we investigate the selective laser ablation process as a means to create a block copolymer derived lithographic pattern through the selective removal of one block. Two block copolymer systems were investigated PS-b-PHOST, and P2VP-b-PS-b-P2VP. The selective laser ablations process on block copolymers offers an alternative to plasma etching when plasma etching is not effective.