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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Defect structural evolution in high purity tungsten irradiated with electrons using high voltage electron microscope
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Defect structural evolution in high purity tungsten irradiated with electrons using high voltage electron microscope

机译:高压电子显微镜观察电子辐照的高纯钨中的缺陷结构演变

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Four types of high purity tungsten were irradiated with 2 MeV electrons to 5 dpa using a high voltage electron microscope, and defect structural evolutions were examined as a function Of the irradiation temperature and the concentration of impurity atoms. Three of materials were made by sintering of tungsten powder with purity of 99.999%, (5N-W), 99.99% (PF-W) and 99.95% (N-W). and one wits it chemical vapor deposited tungsten of 99.9999%, (CVD-W) purity. The formation of interstitial type dislocation loops is Observed above room temperature by electron irradiation. In sintered tungsten, the number density of loops increases with increasing density of impurity atoms, i.e., N-W > PF-W > 5N-W. The density of loops in CVD-W is relatively high, contrary to its purity, In CVD-W, a heterogeneous formation of loops is observed at above 573 K. Loops are aligned on layers, and no loops, are formed between the layers. All four types of specimens have a change in slop of the temperature dependence of loop number density at around 500 K which is caused by impurity atoms. Results of radioactivation analysis and hardness testing are also presented. (c) 2005 Elsevier B.V. All rights reserved.
机译:使用高压电子显微镜用2 MeV电子将5种高纯钨辐照至5 dpa,并检查缺陷结构随辐照温度和杂质原子浓度的变化。通过烧结具有99.999%(5N-W),99.99%(PF-W)和99.95%(N-W)纯度的钨粉制成三种材料。而且它化学气相沉积的钨纯度为(CVD-W)99.9999%。间隙型位错环的形成是在室温以上通过电子辐射观察到的。在烧结钨中,环的数量密度随杂质原子密度的增加而增加,即,N-W> PF-W> 5N-W。 CVD-W中回路的密度相对较高,与其纯度相反。在CVD-W中,在573 K以上观察到回路的异质形成。回路在层上对齐,并且在各层之间不形成回路。所有这四种类型的样品在500 K左右的回线数密度的温度依赖性斜率都有变化,这是由杂质原子引起的。还介绍了放射性分析和硬度测试的结果。 (c)2005 Elsevier B.V.保留所有权利。

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