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首页> 外文期刊>Journal of molecular modeling >Halogen bond tunability I: The effects of aromatic fluorine substitution on the strengths of halogen-bonding interactions involving chlorine, bromine, and iodine
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Halogen bond tunability I: The effects of aromatic fluorine substitution on the strengths of halogen-bonding interactions involving chlorine, bromine, and iodine

机译:卤素键可调性I:芳香族氟取代对涉及氯,溴和碘的卤素键相互作用强度的影响

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In the past several years, halogen bonds have been shown to be relevant in crystal engineering and biomedical applications. One of the reasons for the utility of these types of noncovalent interactions in the development of, for example, pharmaceutical ligands is that their strengths and geometric properties are very tunable. That is, substitution of atoms or chemical groups in the vicinity of a halogen can have a very strong effect on the strength of the halogen bond. In this study we investigate halogen-bonding interactions involving aromatically-bound halogens (Cl, Br, and I) and a carbonyl oxygen. The properties of these halogen bonds are modulated by substitution of aromatic hydrogens with fluorines, which are very electronegative. It is found that these types of substitutions have dramatic effects on the strengths of the halogen bonds, leading to interactions that can be up to 100% stronger. Very good correlations are obtained between the interaction energies and the magnitudes of the positive electrostatic potentials (s-holes) on the halogens. Interestingly, it is seen that the substitution of fluorines in systems containing smaller halogens results in electrostatic potentials resembling those of systems with larger halogens, with correspondingly stronger interaction energies. It is also shown that aromatic fluorine substitutions affect the optimal geometries of the halogen-bonded complexes, often as the result of secondary interactions.
机译:在过去的几年中,卤素键已被证明与晶体工程和生物医学应用相关。在例如药物配体的开发中使用这些类型的非共价相互作用的原因之一是它们的强度和几何性质是非常可调的。即,卤素附近的原子或化学基团的取代可对卤素键的强度产生非常强烈的影响。在这项研究中,我们研究涉及芳族结合的卤素(Cl,Br和I)和羰基氧的卤素键相互作用。这些卤素键的特性是通过芳族氢被氟取代的,而氟具有很强的负电性。发现这些类型的取代对卤素键的强度具有显着影响,从而导致相互作用可增强高达100%。在相互作用能和卤素上的正静电势(s孔)的大小之间获得了很好的相关性。有趣的是,可以看出,在包含较小卤素的体系中取代氟会导致静电势类似于具有较大卤素的体系的静电势,并具有相应较强的相互作用能。还表明,芳族氟取代通常是二次相互作用的结果,会影响与卤素键合的配合物的最佳几何构型。

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