DC conductivity in GeSb2Te4 and (GeSb2Te4)(90)(SnSe2)(10) phase change materials

摘要

The dc electrical conductivity of the bulk amorphous GeSb2Te4 material has been investigated. Pure and samples doped by 10 at. % SnSe2 have been measured. The conductivity in the samples has been compared with that of SnSe2 bulk sample. The activation energy of the doped sample is 0.165 eV. During heating the conductivity of doped material increases, reaches a maximum and then decreases. The comparison with the pure SnSe2 samples allows to explain this behavior by the release above 148 degrees C of a small amount of selenium not bonded in the network.