Study of photoluminescence in gadolinium chloride treated porous silicon structures

摘要

We report the study of photoluminescence in porous silicon treated with gadolinium chloride (GdCl3), and also in as grown porous silicon. The concentration of the gadolinium on the surface of the porous silicon was determined using an "Inductively Coupled Plasma Mass Spectrometer". The photoluminescence measurements were carried out using a custom made system with a 300 nm light source. The photoluminescence intensity was enhanced drastically in GdCl3 treated porous silicon samples, and was a function of the gadolinium concentration in the porous silicon layer. However, the photoluminescence was quenched when the samples were left in room ambience for several months. The rate of quenching remained almost the same in gadolinium treated porous silicon and in the as grown samples.