This paper describes the fabrication process of thermoelectric microconverters, based on n-type bismuth telluride (Bi{sub}2Te{sub}3) and p-type antimony telluride (Sb{sub}2Te{sub}3) thin films. The films are fabricated by thermal co-evaporation with thermoelectric properties comparable to those reported for the same materials in bulk form (used in conventional macro-scale Peltier modules). The absolute value of the Seebeck coefficient in the range of 150-250 μV K{sup}(-1) and an in-plane electrical resistivity of 7-15 μΩ m were obtained. The influence of fabrication parameters on thermoelectric properties is reported. The films were patterned by photolithography and wet-etching techniques, using HNO{sub}3/HCl-based etchants. The influence of composition and concentration of etchants in the lithographic process is reported. A microcooler was fabricated.
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