Image processing in a mu c-Si : H p-i-n image transducer

摘要

A two-dimensional p-i-n imager based on mu c-Si:H material is analysed. The basic building block for the sensor element is a transparent conductive oxide (TCO)mu c-p-i-n Si:H photodiode with front metal contacts and a TCO back contact. A scan-out process based on the photovoltage signal induced by a modulated HeNe laser is used to acquire the image. An analysis of the geometric image distortion and image restoration is given. Basic image processing algorithms are applied for image enhancement and pattern recognition. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 9]