Visible photoluminescence and quantum confinement effects in amorphous Si/SiO2 multilayer structures

摘要

We have prepared amorphous silicon (a-Si)-based multilayer structures by an electron beam deposition technique and studied their luminescence properties. The structure of a-Si/SiO2 multilayers was studied by transmission electron microscopy and X-ray diffraction analysis. With a decrease of the a-Si well thickness. the PL peak energy shifts to higher energy. The temperature dependence of the PL spectrum suggests that the blueshift of the mobility edge occurs and the size-dependent visible luminescence is ascribed to radiative recombination of carriers localized in the shallow tail state, The quantum confinement effects of localized carriers will be discussed. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 22]